| PART |
Description |
Maker |
| FMM50-025TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FT0021 FT0021-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, I...
|
| IXFH20N60 IXFM20N60 IXFH15N60 IXFM15N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.35惟??娌??澧?己??HiPerFET???MOSFET)
|
IXYS[IXYS Corporation]
|
| FDMC8360L |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
Fairchild Semiconductor
|
| PSTG75HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
| IXTQ50N25T IXTP50N25T IXTA50N25T IXTH50N25T |
Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXFR150N15 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电B>12.5mΩ的N沟道增强型HiPerFET功率MOSFET)
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs ISOPLUS247
|
IXYS Corporation
|
| IXFH21N50 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.25惟??娌??澧?己??HiPerFET???MOSFET)
|
IXYS CORP
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
